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Properties of non-polar a-plane GaN/AlGaN quantum wells

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Kappers, M.J., Hollander, J.L., Johnston, C.F., McAleese, C., Sridhara Rao, D.V., Sánchez, Ana M., Humphreys, C.J., Badcock, T.J. and Dawson, P. (2008) Properties of non-polar a-plane GaN/AlGaN quantum wells. Journal of Crystal Growth, Vol. 310 (No. 23). pp. 4983-4986. doi:10.1016/j.jcrysgro.2008.08.048 ISSN 00220248.

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2008.08.048

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Abstract

The structural and optical properties of a series of GaN/Al0.18Ga0.82N multiple quantum well (MQW) structures, in which the well thickness was varied between 2 and 8 nm, grown on a-plane (1 1 0) GaN on r-plane (1 0 2) sapphire substrates have been investigated. High-resolution X-ray diffraction and low-angle X-ray reflectivity measurements were used to determine the well and barrier thicknesses and the barrier composition after matrix transformation of the (binary) elastic constants for the appropriate coordinates, and assuming a pseudo-morphically strained system. The microstructure of the (1 1 0) samples is dominated by I1-type basal-plane stacking faults (BSF) terminated by partial dislocations or prismatic stacking faults, as determined by conventional and high-resolution transmission electron microscopy. The low temperature photoluminescence (PL) spectra of the QW structures show two emission bands which are assigned (partly based on photoluminescence excitation (PLE) spectroscopy) to excitons that are confined solely by the quantum wells and, at lower energy, those carriers that recombine in the region where the wells are intersected by BSFs. Both bands shift to higher energy with decreasing quantum well thickness. The optical data indicate that the non-polar (1 1 0) GaN/AlGaN system is free of polarization-induced electric fields, since the QW exciton emission energy is not below the band-edge emission energy of the GaN template.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Journal of Crystal Growth
Publisher: Elsevier Science BV
ISSN: 00220248
Official Date: 2008
Dates:
DateEvent
2008UNSPECIFIED
Volume: Vol. 310
Number: No. 23
Page Range: pp. 4983-4986
DOI: 10.1016/j.jcrysgro.2008.08.048
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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