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Controlled nitrogen incorporation in GaNSb alloys

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Ashwin, M. J., Veal, T. D. (Tim D.), Bomphrey, John James, Dunn, I. R., Walker, D., Thomas, Pam A. and Jones, T. S. (Tim S.) (2011) Controlled nitrogen incorporation in GaNSb alloys. AIP Advances, Vol. 1 (No. 3). 032159. doi:10.1063/1.3643259

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Official URL: http://dx.doi.org/10.1063/1.3643259

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Abstract

The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: AIP Advances
Publisher: American Institute of Physics
ISSN: 2158-3226
Official Date: 2011
Dates:
DateEvent
2011Published
Volume: Vol. 1
Number: No. 3
Page Range: 032159
DOI: 10.1063/1.3643259
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access

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