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Controlled nitrogen incorporation in GaNSb alloys
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Ashwin, M. J., Veal, T. D. (Tim D.), Bomphrey, John James, Dunn, I. R., Walker, D., Thomas, Pam A. and Jones, T. S. (Tim S.) (2011) Controlled nitrogen incorporation in GaNSb alloys. AIP Advances, Vol. 1 (No. 3). 032159. doi:10.1063/1.3643259
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Official URL: http://dx.doi.org/10.1063/1.3643259
Abstract
The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | AIP Advances | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 2158-3226 | ||||
| Official Date: | 2011 | ||||
| Dates: |
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| Volume: | Vol. 1 | ||||
| Number: | No. 3 | ||||
| Page Range: | 032159 | ||||
| DOI: | 10.1063/1.3643259 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Open Access |
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