Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix
Buljan, Maja, Pinto, Sara R. C., Kashtiban, Reza J., Rolo, Anabela G., Chahboun, Adil, Bangert, Ursel, Levichev, Sergey, Holý, Václav and Gomes, Maria J. M.. (2009) Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix. Journal of Applied Physics, Vol. 106 (No. 8). 084319. ISSN 0021-8979Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3248373
In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle x-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement, and concentration of quantum dots in the matrix, as well as the Si:Ge content.
|Item Type:||Journal Article|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Journal of Applied Physics|
|Access rights to Published version:||Restricted or Subscription Access|
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