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Optical and microstructural studies of InGaN/GaN quantum dot ensembles

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Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., Yea, B. S., Sherliker, B. J., Halsall, M. P., Kashtiban, Reza J. and Bangert, U. (2009) Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, Vol. 95 (No. 11). p. 111903. doi:10.1063/1.3226645

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Official URL: http://dx.doi.org/10.1063/1.3226645

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Abstract

An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 00036951
Official Date: 2009
Dates:
DateEvent
2009Published
Volume: Vol. 95
Number: No. 11
Page Range: p. 111903
DOI: 10.1063/1.3226645
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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