Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., Yea, B. S., Sherliker, B. J., Halsall, M. P., Kashtiban, Reza J. and Bangert, U.. (2009) Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, Vol. 95 (No. 11). p. 111903. ISSN 00036951

Full text not available from this repository.

Abstract

An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

Item Type:	Journal Article
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	00036951
Official Date:	2009
Volume:	Vol. 95
Number:	No. 11
Page Range:	p. 111903
Identification Number:	10.1063/1.3226645
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
URI:	http://wrap.warwick.ac.uk/id/eprint/48397

Request changes or add full text files to a record

Actions (login required)

View Item