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Optical and microstructural studies of InGaN/GaN quantum dot ensembles
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Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., Yea, B. S., Sherliker, B. J., Halsall, M. P., Kashtiban, Reza J. and Bangert, U. (2009) Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, Vol. 95 (No. 11). p. 111903. doi:10.1063/1.3226645 ISSN 00036951.
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Official URL: http://dx.doi.org/10.1063/1.3226645
Abstract
An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 00036951 | ||||
| Official Date: | 2009 | ||||
| Dates: |
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| Volume: | Vol. 95 | ||||
| Number: | No. 11 | ||||
| Page Range: | p. 111903 | ||||
| DOI: | 10.1063/1.3226645 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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