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Optical and microstructural studies of InGaN/GaN quantum dot ensembles
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Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., Yea, B. S., Sherliker, B. J., Halsall, M. P., Kashtiban, Reza J. and Bangert, U.. (2009) Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, Vol. 95 (No. 11). p. 111903. ISSN 00036951
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Official URL: http://dx.doi.org/10.1063/1.3226645
Abstract
An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.
| Item Type: | Journal Article |
|---|---|
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 00036951 |
| Official Date: | 2009 |
| Volume: | Vol. 95 |
| Number: | No. 11 |
| Page Range: | p. 111903 |
| Identification Number: | 10.1063/1.3226645 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/48397 |
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