Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering
Pinto, Sara RC, Rolo, Anabela G, Buljan, Maja, Chahboun, Adil, Bernstorff, Sigrid, Barradas, Nuno P, Alves, Eduardo, Kashtiban, Reza J., Bangert, Ursel and Gomes, Maria JM. (2011) Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering. Nanoscale Research Letters, Vol. 6 (No. 1). p. 341. ISSN 1556-276XFull text not available from this repository.
Official URL: http://dx.doi.org/10.1186/1556-276X-6-341
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
|Item Type:||Journal Article|
|Journal or Publication Title:||Nanoscale Research Letters|
|Page Range:||p. 341|
|Access rights to Published version:||Open Access|
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