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Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering
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Pinto, Sara RC, Rolo, Anabela G, Buljan, Maja, Chahboun, Adil, Bernstorff, Sigrid, Barradas, Nuno P, Alves, Eduardo, Kashtiban, Reza J., Bangert, Ursel and Gomes, Maria JM. (2011) Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering. Nanoscale Research Letters, Vol. 6 (No. 1). p. 341. ISSN 1556-276X
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Official URL: http://dx.doi.org/10.1186/1556-276X-6-341
Abstract
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
| Item Type: | Journal Article |
|---|---|
| Journal or Publication Title: | Nanoscale Research Letters |
| Publisher: | Springer |
| ISSN: | 1556-276X |
| Date: | 2011 |
| Volume: | Vol. 6 |
| Number: | No. 1 |
| Page Range: | p. 341 |
| Identification Number: | 10.1186/1556-276X-6-341 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Open Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/48398 |
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