Ge nanocrystals in alumina matrix: A structural study
Kashtiban, Reza J., Pinto, S R C, Bangert, U, Rolo, A G, Chahboun, A, Gomes, M J M and Harvey, A J (2010) Ge nanocrystals in alumina matrix: A structural study. In: 16th International Conference on Microscopy of Semiconducting Materials , Oxford University, UK, 17-20 March 2009. Published in: Journal of Physics: Conference Series, Vol. 209 (No. 1). 012060.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1088/1742-6596/209/1/012060
Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on silicon (111) substrates using radio-frequency (RF) magnetron sputtering. By changing growth condition and annealing parameters samples with large and small Ge-NCs were produced. The average size of NCs in the sample with larger NCs was estimated to be 7.2, 30.0 and 7.6 nm, and 5.0, 7.0 and 4.8 nm for the sample with smaller NCs, according to X-ray diffraction (XRD), Raman and high resolution transmission electron microscopy (HRTEM) results, respectively. Both, XRD and Raman peak positions of the larger NCs are shifted to higher angles and larger wave numbers in relation to the Ge bulk values, whereas the Raman peak was red-shifted for the smaller NCs indicating phonon confinement. HRTEM shows twinned structures, which is an indication of relaxation. Strain evaluation of the bigger NCs gave values < 0.5 % which is within the estimated error of the evaluation technique.
|Item Type:||Conference Item (Paper)|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Journal of Physics: Conference Series|
|Conference Paper Type:||Paper|
|Title of Event:||16th International Conference on Microscopy of Semiconducting Materials|
|Type of Event:||Conference|
|Location of Event:||Oxford University, UK|
|Date(s) of Event:||17-20 March 2009|
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