Raman study of stress effect on Ge nanocrystals embedded in Al2O3
Pinto, S.R.C., Rolo, A.G., Chahboun, A., Kashtiban, Reza J., Bangert, U. and Gomes, M.J.M.. (2010) Raman study of stress effect on Ge nanocrystals embedded in Al2O3. Thin Solid Films, Vol. 518 (No. 19). pp. 5378-5381. ISSN 00406090Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.tsf.2010.03.035
Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.
|Item Type:||Journal Article|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Thin Solid Films|
|Publisher:||Elsevier Science BV|
|Page Range:||pp. 5378-5381|
|Access rights to Published version:||Restricted or Subscription Access|
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