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Raman study of stress effect on Ge nanocrystals embedded in Al2O3
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Pinto, S.R.C., Rolo, A.G., Chahboun, A., Kashtiban, Reza J., Bangert, U. and Gomes, M.J.M.. (2010) Raman study of stress effect on Ge nanocrystals embedded in Al2O3. Thin Solid Films, Vol. 518 (No. 19). pp. 5378-5381. ISSN 00406090
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Official URL: http://dx.doi.org/10.1016/j.tsf.2010.03.035
Abstract
Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.
| Item Type: | Journal Article |
|---|---|
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Thin Solid Films |
| Publisher: | Elsevier Science BV |
| ISSN: | 00406090 |
| Date: | 2010 |
| Volume: | Vol. 518 |
| Number: | No. 19 |
| Page Range: | pp. 5378-5381 |
| Identification Number: | 10.1016/j.tsf.2010.03.035 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/48405 |
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