Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness
Kashtiban, Reza J., Bangert, U. and Missous, M.. (2009) Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. Microelectronics Journal, Vol. 40 (No. 3). pp. 479-482. ISSN 00262692Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.078
Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8–3.2 nm height and 13–16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS).
|Item Type:||Journal Article|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Microelectronics Journal|
|Publisher:||Elsevier Science BV|
|Page Range:||pp. 479-482|
|Access rights to Published version:||Restricted or Subscription Access|
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