Kashtiban, Reza J., Bangert, U. and Missous, M. (2009) Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. Microelectronics Journal, Vol. 40 (No. 3). pp. 479-482. doi:10.1016/j.mejo.2008.06.078 ISSN 00262692.

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Abstract

Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8–3.2 nm height and 13–16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS).

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Microelectronics Journal
Publisher:	Elsevier Science BV
ISSN:	00262692
Official Date:	2009
Dates:	Date Event 2009 Published
Volume:	Vol. 40
Number:	No. 3
Page Range:	pp. 479-482
DOI:	10.1016/j.mejo.2008.06.078
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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