Structural study of Si1−xGex nanocrystals embedded in SiO2 films
Pinto, S.R.C., Kashtiban, Reza J., Rolo, A.G., Buljan, M., Chahboun, A., Bangert, U., Barradas, N.P., Alves, E. and Gomes, M.J.M.. (2010) Structural study of Si1−xGex nanocrystals embedded in SiO2 films. Thin Solid Films, Vol. 518 (No. 9). pp. 2569-2572. ISSN 00406090Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.tsf.2009.09.148
We have investigated the structural properties of Si1 − xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1 − xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.
|Item Type:||Journal Article|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Thin Solid Films|
|Publisher:||Elsevier Science BV|
|Page Range:||pp. 2569-2572|
|Access rights to Published version:||Restricted or Subscription Access|
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