Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy
Kashtiban, Reza J., Bangert, U, Sherliker, B, Halsall, M P and Harvey, A J (2010) Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy. In: 16th International Conference on Microscopy of Semiconducting Materials , Oxford University, UK, 17-20 March 2009. Published in: Journal of Physics: Conference Series, Vol. 209 (No. 1). 012038.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1088/1742-6596/209/1/012038
InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation.
|Item Type:||Conference Item (Paper)|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Journal of Physics: Conference Series|
|Publisher:||Institute of Physics Publishing Ltd.|
|Date:||26 February 2010|
|Conference Paper Type:||Paper|
|Title of Event:||16th International Conference on Microscopy of Semiconducting Materials|
|Type of Event:||Conference|
|Location of Event:||Oxford University, UK|
|Date(s) of Event:||17-20 March 2009|
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