Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.) (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. doi:10.1149/2.063205jes ISSN 0013-4651.

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Abstract

The thermal stability of thin (≤110 nm) compressively strained Ge surface channels, grown by reduced-pressure chemical vapor deposition on high quality relaxed Si0.2Ge0.8 reverse-graded buffers, has been investigated using in-situ hydrogen annealing at temperatures up to 650°C. Strain relaxation was observed and found to increase for thicker channels and higher anneal temperatures. For a Ge channel thickness ≤45 nm, an increased surface roughening was found to dominate the strain relaxation process, which culminated in islanding. For the thicker (≥45 nm) Ge channels misfit dislocation generation appeared to be the most dominant mechanism. Our results show that low thermal budgets (T < 550°C) should be employed for the fabrication of ∼0.65% lattice mismatch strained Ge channels currently being developed for applications in CMOS-based devices and strained Ge-on-insulator platforms.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Journal of The Electrochemical Society
Publisher:	Electrochemical Society, Inc.
ISSN:	0013-4651
Official Date:	2012
Dates:	Date Event 2012 Published
Volume:	Vol.159
Number:	No.5
Page Range:	H490-H496
DOI:	10.1149/2.063205jes
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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