O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells
Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. ISSN 0142-2421Full text not available from this repository.
Official URL: http://dx.doi.org/10.1002/sia.4963
The O 2 + probe-sample conditions and subsequent data analysis required to obtain high depth resolution SIMS depth profiles from Si 1-xGe x/Ge quantum well structures (0.6 ≤ x ≤ 1) are presented. For primary beam energies E p>500eV and x approaching 1, a significant decrease in the Ge + ionisation probability resulted in unrepresentative and unquantifiable depth profiles. For E p≤500eV, a monotonic increase in the Ge + signal with x was observed resulting in profiles representative of the sample structure and enabling x to be found. A depth scale was also established using a point-by-point approach taking into account the local erosion rate, which is a function of x. Both the composition and the thickness of the Si 1-xGe x and Ge layers were found to be in excellent agreement with those obtained using X-ray and transmission electron microscopy. © 2012 John Wiley & Sons, Ltd.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Surface and Interface Analysis|
|Publisher:||John Wiley & Sons Ltd.|
|Page Range:||pp. 348-351|
|Access rights to Published version:||Restricted or Subscription Access|
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