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O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells
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Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. doi:10.1002/sia.4963 ISSN 0142-2421.
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Official URL: http://dx.doi.org/10.1002/sia.4963
Abstract
The O 2 + probe-sample conditions and subsequent data analysis required to obtain high depth resolution SIMS depth profiles from Si 1-xGe x/Ge quantum well structures (0.6 ≤ x ≤ 1) are presented. For primary beam energies E p>500eV and x approaching 1, a significant decrease in the Ge + ionisation probability resulted in unrepresentative and unquantifiable depth profiles. For E p≤500eV, a monotonic increase in the Ge + signal with x was observed resulting in profiles representative of the sample structure and enabling x to be found. A depth scale was also established using a point-by-point approach taking into account the local erosion rate, which is a function of x. Both the composition and the thickness of the Si 1-xGe x and Ge layers were found to be in excellent agreement with those obtained using X-ray and transmission electron microscopy. © 2012 John Wiley & Sons, Ltd.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Surface and Interface Analysis | ||||
Publisher: | John Wiley & Sons Ltd. | ||||
ISSN: | 0142-2421 | ||||
Official Date: | January 2013 | ||||
Dates: |
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Volume: | Volume 45 | ||||
Number: | Number 1 | ||||
Page Range: | pp. 348-351 | ||||
DOI: | 10.1002/sia.4963 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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