Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, Crispin H. W. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. doi:10.1063/1.3505337

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Abstract

Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505337]

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Aluminum compounds, Electroforming, Semiconductors, Gallium arsenide, Germanium , Rotational motion
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	18 October 2010
Dates:	Date Event 18 October 2010 Published
Volume:	Vol.97
Number:	No.16
Number of Pages:	3
Page Range:	pp. 162104-1
DOI:	10.1063/1.3505337
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EPF0240451 (EPSRC)

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