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High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform
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Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.) (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. doi:10.1149/1.3482159 ISSN 1099-0062.
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Official URL: http://dx.doi.org/10.1149/1.3482159
Abstract
High structural quality, compressively strained Ge surface epilayers have been grown on Si(100) substrates of up to 200 mm diameter. The epitaxial growth by industrially compatible reduced pressure chemical vapor deposition proceeded uninterruptedly via an intermediate relaxed Si0.2Ge0.8/Ge buffer. In-depth characterization of the epilayers revealed a relatively smooth surface and a low threading dislocation density. The Ge layers were demonstrated to remain fully strained for thicknesses of more than 100 nm. The high quality of the material and flexibility to choose the Ge layer thickness over a wide range make these heterostructures very attractive for fabricating various electronic and photonic devices. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3482159] All rights reserved.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Germanium, Silicon, Epitaxy, Chemical vapor deposition, Heterostructures | ||||
| Journal or Publication Title: | Electrochemical and Solid State Letters | ||||
| Publisher: | Electrochemical Society, Inc. | ||||
| ISSN: | 1099-0062 | ||||
| Official Date: | 2010 | ||||
| Dates: |
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| Volume: | Vol.13 | ||||
| Number: | No.11 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | H388-H390 | ||||
| DOI: | 10.1149/1.3482159 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/F031408/1 (EPSRC) |
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