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Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

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Antolin, E., Marti, A., Farmer, C. D., Linares, P. G., Hernandez, E., Sánchez, Ana M., Ben, T., Molina, S. I., Stanley, C. R. and Luque, A. (2010) Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell. Journal of Applied Physics, Vol.108 (No.6). Article: 064513. doi:10.1063/1.3468520

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Official URL: http://dx.doi.org/10.1063/1.3468520

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Abstract

Intermediate band solar cells (IBSCs) fabricated to date from In (Ga)As/GaAs quantum dot arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap energies. However, the production of sub-bandgap photocurrent relies often on the thermal and/or tunneling escape of carriers from the QDs, which is incompatible with preservation of the output voltage. In this work, we test the effectiveness of introducing a thick GaAs spacer in addition to an InAlGaAs strain relief layer (SRL) over the QDs to reduce carrier escape. From an analysis of the QE at different temperatures, it is concluded that escape via tunneling can be completely blocked under short-circuit conditions, and that carriers confined in QDs with an InAlGaAs SRL exhibit a thermal escape activation energy over 100 meV larger than in the case of InAs QDs capped only with GaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3468520]

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Official Date: 15 September 2010
Dates:
DateEvent
15 September 2010Published
Volume: Vol.108
Number: No.6
Number of Pages: 7
Page Range: Article: 064513
DOI: 10.1063/1.3468520
Status: Peer Reviewed
Publication Status: Published
Funder: European Commission, Regional Government of Madrid, Spanish National Research Program, MCI, Andalusian Regional Government
Grant number: 211640, S2009/ENE-1477, CSD2006-0004, TEC2008-06756-C03-02/TEC, P08-TEP-03516

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