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Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
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Antolin, E., Marti, A., Farmer, C. D., Linares, P. G., Hernandez, E., Sánchez, Ana M., Ben, T., Molina, S. I., Stanley, C. R. and Luque, A. (2010) Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell. Journal of Applied Physics, Vol.108 (No.6). Article: 064513. doi:10.1063/1.3468520
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Official URL: http://dx.doi.org/10.1063/1.3468520
Abstract
Intermediate band solar cells (IBSCs) fabricated to date from In (Ga)As/GaAs quantum dot arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap energies. However, the production of sub-bandgap photocurrent relies often on the thermal and/or tunneling escape of carriers from the QDs, which is incompatible with preservation of the output voltage. In this work, we test the effectiveness of introducing a thick GaAs spacer in addition to an InAlGaAs strain relief layer (SRL) over the QDs to reduce carrier escape. From an analysis of the QE at different temperatures, it is concluded that escape via tunneling can be completely blocked under short-circuit conditions, and that carriers confined in QDs with an InAlGaAs SRL exhibit a thermal escape activation energy over 100 meV larger than in the case of InAs QDs capped only with GaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3468520]
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 15 September 2010 | ||||
| Dates: |
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| Volume: | Vol.108 | ||||
| Number: | No.6 | ||||
| Number of Pages: | 7 | ||||
| Page Range: | Article: 064513 | ||||
| DOI: | 10.1063/1.3468520 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | European Commission, Regional Government of Madrid, Spanish National Research Program, MCI, Andalusian Regional Government | ||||
| Grant number: | 211640, S2009/ENE-1477, CSD2006-0004, TEC2008-06756-C03-02/TEC, P08-TEP-03516 |
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