Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821

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Abstract

The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	13 September 2010
Dates:	Date Event 13 September 2010 Published
Volume:	Vol.97
Number:	No.11
Number of Pages:	3
Page Range:	Article: 112103
DOI:	10.1063/1.3488821
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	European Commission, Engineering and Physical Sciences Research Council (EPSRC), Advantage West Midlands (AWM), European Regional Development Fund (ERDF), AFOSR, NSF MRSEC
Grant number:	PITN-GA-2008-213238, EP/G004447/1 (EPSRC), DMR05-20415

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