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Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection
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Gilbertson, A. M., Benstock, D., Fearn, M., Kormányos, A., Ladak, S., Emeny, M. T., Lambert, C. J., Ashley, T., Solin, S. A. and Cohen, L. F. (2011) Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. Applied Physics Letters, Vol. 98 (No. 6). 062106. doi:10.1063/1.3554427 ISSN 00036951.
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Official URL: http://dx.doi.org/10.1063/1.3554427
Abstract
We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1−xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm2, with a maximum responsivity of 20 kΩ/T, and a noise-equivalent field of 0.87 μT/ at 100 K.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 00036951 | ||||
Official Date: | 2011 | ||||
Dates: |
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Volume: | Vol. 98 | ||||
Number: | No. 6 | ||||
Page Range: | 062106 | ||||
DOI: | 10.1063/1.3554427 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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