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Emergent quantum confinement at topological insulator surfaces

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Bahramy, M. S., King, P. D. C, de la Torre, A., Chang, J., Shi, M., Patthey, L., Balakrishnan, Geetha, Hofmann, Ph., Arita, R., Nagaosa, N. and Baumberger, F. (2012) Emergent quantum confinement at topological insulator surfaces. Nature Communications, Vol.3 . Article no. 1159. doi:10.1038/ncomms2162

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Official URL: http://dx.doi.org/10.1038/ncomms2162

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Abstract

Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial Z2 topology. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic structure whose origin and properties have proved controversial. Here we demonstrate that a conceptually simple model, implementing a semiconductor-like band bending in a parameter-free tight-binding supercell calculation, can quantitatively explain the entire measured hierarchy of electronic states. In combination with circular dichroism in angle-resolved photoemission experiments, we further uncover a rich three-dimensional spin texture of this surface electronic system, resulting from the non-trivial topology of the bulk band structure. Moreover, our study sheds new light on the surface-bulk connectivity in topological insulators, and reveals how this is modified by quantum confinement.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Nature Communications
Publisher: Nature Publishing Group
ISSN: 2041-1723
Official Date: 2012
Dates:
DateEvent
2012Published
Volume: Vol.3
Page Range: Article no. 1159
DOI: 10.1038/ncomms2162
Status: Peer Reviewed
Publication Status: Published

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