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Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process
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Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Volume 5 (Number 7). 071301. doi:10.1143/APEX.5.071301 ISSN 1882-0778.
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Official URL: http://dx.doi.org/10.1143/APEX.5.071301
Abstract
Epitaxial growth of thick Ge layers on a (111)-Si substrate has been investigated. We demonstrate that the residual compressive strain in a thin, partially relaxed Ge seed layer can be exploited to promote an intermediate islanding step, significantly reducing the threading dislocation density (similar to 3 x 10(8) cm(-2)) and almost entirely suppressing stacking fault formation. The higher Ge growth rate on the {113} sidewalls of the islands compared to the (111) top surface results in a smooth layer with a low rms surface roughness of 2 nm. Such layers have the potential to be extremely important in realizing next-generation high-mobility n-channel transistors. (c) 2012 The Japan Society of Applied Physics
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Applied Physics Express | ||||
| Publisher: | Institute of Pure and Applied Physics | ||||
| ISSN: | 1882-0778 | ||||
| Official Date: | July 2012 | ||||
| Dates: |
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| Volume: | Volume 5 | ||||
| Number: | Number 7 | ||||
| Page Range: | 071301 | ||||
| DOI: | 10.1143/APEX.5.071301 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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