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Controlling bulk conductivity in topological insulators : key role of anti-site defects
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Scanlon, David O., King, P. D. C., Singh, R. P., de la Torre, A., Walker, S. McKeown, Balakrishnan, G., Baumberger, F. and Catlow, C. R. A. (2012) Controlling bulk conductivity in topological insulators : key role of anti-site defects. Advanced Materials, Vol.24 (No.16). pp. 2154-2158. doi:10.1002/adma.201200187 ISSN 0935-9648.
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Official URL: http://dx.doi.org/10.1002/adma.201200187
Abstract
Intrinsic topological insulators are realized by alloying Bi2Te3 with Bi2Se3. Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Advanced Materials | ||||
Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||
ISSN: | 0935-9648 | ||||
Official Date: | 24 April 2012 | ||||
Dates: |
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Volume: | Vol.24 | ||||
Number: | No.16 | ||||
Page Range: | pp. 2154-2158 | ||||
DOI: | 10.1002/adma.201200187 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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