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Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants
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Linhart, W. M., Chai, J., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., McConville, C. F. (Chris F.), Durbin, S. and Veal, T. D. (Tim D.) (2012) Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants. Physical Review Letters, Vol.109 (No.24). Article no. 247605. doi:10.1103/PhysRevLett.109.247605 ISSN 0031-9007.
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Official URL: http://dx.doi.org/10.1103/PhysRevLett.109.247605
Abstract
Extreme electron accumulation with sheet density greater than 1013 cm-2 is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 108 cm-2. Surface space-charge calculations indicate that the lowering of the surface Fermi level increases the density of unoccupied donor-type surface states and that these are largely compensated by Mg acceptors in the near-surface hole depletion region rather than by accumulated electrons. This is a significant step towards the realization of InN-based optoelectronic devices.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Physical Review Letters | ||||
Publisher: | American Physical Society | ||||
ISSN: | 0031-9007 | ||||
Official Date: | 2012 | ||||
Dates: |
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Volume: | Vol.109 | ||||
Number: | No.24 | ||||
Number of Pages: | 5 | ||||
Page Range: | Article no. 247605 | ||||
DOI: | 10.1103/PhysRevLett.109.247605 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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