The Library
Minority carrier lifetime in Czochralski silicon containing oxide precipitates
Tools
Murphy, John D., Bothe, Karsten, Olmo, Massimiliano., Voronkov, Vladimir V. and Falster, Robert J. (2010) Minority carrier lifetime in Czochralski silicon containing oxide precipitates. In: 218th ECS Meeting: High Purity Silicon 11, Las Vegas, Nevada, USA, 10-15 Oct 2010. Published in: ECS Transactions, Vol.33 (No.11). pp. 121-132. doi:10.1149/1.3485687 ISSN 1938-5862.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1149/1.3485687
Abstract
Photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed under very clean conditions to contain oxide precipitates. 24 different sample types were characterised by chemical etching and transmission electron
microscopy to determine the density and morphology of the precipitates. For samples processed to contain mainly unstrained precipitates, the lifetime component associated with oxide precipitates was extremely high (up to 4.5ms at an injection level corresponding to half of the doping level). The lifetime results show that the rate of recombination depends upon the strain state
of the precipitates. Recombination at unstrained oxide precipitates (sometimes referred to as “ninja particles”) is weak, with a capture coefficient of approximately 1 x 10
-7 cm 3 s -1 . Strained oxide precipitates and defects associated with them (dislocations and stacking faults) act as much stronger recombination centres with a
capture coefficient of approximately 3 x 10 -6 cm 3 s -1
. Recombination at strained precipitates and associated defects was found to depend mainly on their density (as opposed to size).
Item Type: | Conference Item (Paper) | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | ECS Transactions | ||||
Publisher: | Electrochemical Society, Inc. | ||||
ISSN: | 1938-5862 | ||||
Official Date: | October 2010 | ||||
Dates: |
|
||||
Volume: | Vol.33 | ||||
Number: | No.11 | ||||
Page Range: | pp. 121-132 | ||||
DOI: | 10.1149/1.3485687 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 218th ECS Meeting: High Purity Silicon 11 | ||||
Type of Event: | Conference | ||||
Location of Event: | Las Vegas, Nevada, USA | ||||
Date(s) of Event: | 10-15 Oct 2010 |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |