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Measurements of dislocation locking by near-surface ion-implanted nitrogen in czochralski silicon
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Alpass, C. R., Jain, A., Murphy, John D. and Wilshaw, P. R. (2009) Measurements of dislocation locking by near-surface ion-implanted nitrogen in czochralski silicon. Journal of The Electrochemical Society, Vol.156 (No.8). H669-H673. doi:10.1149/1.3151813 ISSN 0013-4651.
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Official URL: http://dx.doi.org/10.1149/1.3151813
Abstract
A modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds by a dissociative mechanism, where transport occurs by the splitting of immobile dimers into fast monomers, rather than movement of nitrogen dimers. In other experiments, nitrogen-doped float-zone silicon is investigated using the standard dislocation unlocking technique. The results give an activation energy for effective nitrogen diffusion in silicon of 3.24±0.25eV at 500–750°C . Using the assumption that the dislocation locking strength per nitrogen atom is the same as that of oxygen, a value of 200,000cm2s−1 can be inferred for the effective diffusivity prefactor. If analyzed using the dissociative model, an activation energy of 1.1–1.4 eV is found for nitrogen monomer diffusion, with a diffusivity prefactor of 30cm2s−1 .
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Journal of The Electrochemical Society | ||||
Publisher: | Electrochemical Society, Inc. | ||||
ISSN: | 0013-4651 | ||||
Official Date: | 2009 | ||||
Dates: |
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Volume: | Vol.156 | ||||
Number: | No.8 | ||||
Page Range: | H669-H673 | ||||
DOI: | 10.1149/1.3151813 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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