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Nitrogen in silicon : diffusion at 500–750°C and interaction with dislocations
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Alpass, C. R., Murphy, John D., Falster, R. J. and Wilshaw, P. R. (2009) Nitrogen in silicon : diffusion at 500–750°C and interaction with dislocations. Materials Science and Engineering: B , Vol.159-160 . pp. 95-98. doi:10.1016/j.mseb.2008.09.004 ISSN 0921-5107.
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Official URL: http://dx.doi.org/10.1016/j.mseb.2008.09.004
Abstract
The results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing time gives an activation energy for nitrogen diffusion of 3.24 eV in the 500–750 °C temperature range. Numerical simulations of nitrogen diffusion to the dislocation core allow an approximate value of 200,000 cm2 s−1 to be estimated for the diffusivity pre-factor. These diffusion measurements are consistent with the results of higher temperature secondary ion mass spectrometry out-diffusion experiments in the literature. Other measurements made at up to 1050 °C followed by fast quenching indicate that nitrogen’s ability to lock dislocations is substantially reduced at high temperatures.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Materials Science and Engineering: B | ||||
Publisher: | Elsevier S.A. | ||||
ISSN: | 0921-5107 | ||||
Official Date: | 2009 | ||||
Dates: |
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Volume: | Vol.159-160 | ||||
Page Range: | pp. 95-98 | ||||
DOI: | 10.1016/j.mseb.2008.09.004 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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