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Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range
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de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M. and Krier, A.. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, Vol.43 (No.34). Article: 345103. ISSN 0022-3727
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Official URL: http://dx.doi.org/10.1088/0022-3727/43/34/345103
Abstract
We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Journal of Physics D: Applied Physics |
| Publisher: | IOP Publishing |
| ISSN: | 0022-3727 |
| Date: | 1 September 2010 |
| Volume: | Vol.43 |
| Number: | No.34 |
| Number of Pages: | 4 |
| Page Range: | Article: 345103 |
| Identification Number: | 10.1088/0022-3727/43/34/345103 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Birmingham Science City: Creating and Characterizing Next Generation Advanced Materials, Advantage West Midlands (AWM), European Regional Development Fund (ERDF) |
| URI: | http://wrap.warwick.ac.uk/id/eprint/5370 |
Data sourced from Thomson Reuters' Web of Knowledge
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