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MBE growth and characterization of Mn-doped InN
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Chai, Jessica H., Myers, Thomas H., Song, Young-Wook, Reeves, Roger J., Linhart, W. M., Morris, R. J. H. (Richard J. H.), Veal, T. D. (Tim D.), Dowsett, M. G., McConville, C. F. (Chris F.) and Durbin, Steven M. (2012) MBE growth and characterization of Mn-doped InN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 30 (Number 2). 02B124. doi:10.1116/1.3687903 ISSN 1071-1023.
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Official URL: http://dx.doi.org/10.1116/1.3687903
Abstract
The majority of InN doping studies have primarily focused on Mg, as it has previously been used to successfully realize p-type GaN. Here, we consider an alternative dopant—Mn—as a possible acceptor candidate in InN. Magnetotransport, x ray photoelectron spectroscopy, and photoluminescence were used to investigate electrical and optical properties of a series of Mn-doped InN thin films grown using molecular beam epitaxy. Evidence of acceptor behavior was observed only for moderate (1017 cm−3) doping levels. At a doping level around 1017 cm−3, light hole features appear in the quantitative mobility spectrum analysis, the surface Fermi level shifts downwards towards the valence band, and low energy features appear in the low temperature photoluminescence spectra.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 1071-1023 | ||||
Official Date: | 2012 | ||||
Dates: |
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Volume: | Volume 30 | ||||
Number: | Number 2 | ||||
Page Range: | 02B124 | ||||
DOI: | 10.1116/1.3687903 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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