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Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature

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Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.) (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . doi:10.1088/0268-1242/25/8/085007 ISSN 0268-1242.

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Official URL: http://dx.doi.org/10.1088/0268-1242/25/8/085007

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Abstract

Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 degrees C by reduced-pressure chemical vapour deposition (RP-CVD) as platforms for high quality strained Si layers. It is critical that these buffers have a low threading dislocation density (TDD) to maximize carrier mobility and minimize leakage currents in high performance electronic devices. The influence of the Si1-xGex growth rate on TDD has been investigated for buffers with Ge content x <= 0.5. In contrast to the established understanding, the TDD, in this growth regime, exhibits almost no dependence upon the Si1-xGex growth rate. We suggest that at these high temperatures the gliding arms associated with dislocations have a sufficiently high velocity for the layers to relax even at the highest growth rates. Hence, no benefit is gained from reducing the growth rate, as required at lower growth temperatures to allow the threading arms to glide. The relaxed buffers produced at these high growth rates, nevertheless, have state-of-the-art TDD values of similar to 6 x 10(4) cm(-2) and similar to 1 x 10(5) cm(-2) for Si0.8Ge0.2 and Si0.5Ge0.5 buffers, respectively.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Semiconductor Science and Technology
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0268-1242
Official Date: 2 August 2010
Dates:
DateEvent
2 August 2010Published
Volume: Vol.25
Number: No. 8
Number of Pages: 6
Page Range: article no. 085007
DOI: 10.1088/0268-1242/25/8/085007
Status: Peer Reviewed
Publication Status: Published
Funder: European Commission
Grant number: IST-026828, 216171

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