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Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature
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Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.) (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . doi:10.1088/0268-1242/25/8/085007
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Official URL: http://dx.doi.org/10.1088/0268-1242/25/8/085007
Abstract
Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 degrees C by reduced-pressure chemical vapour deposition (RP-CVD) as platforms for high quality strained Si layers. It is critical that these buffers have a low threading dislocation density (TDD) to maximize carrier mobility and minimize leakage currents in high performance electronic devices. The influence of the Si1-xGex growth rate on TDD has been investigated for buffers with Ge content x <= 0.5. In contrast to the established understanding, the TDD, in this growth regime, exhibits almost no dependence upon the Si1-xGex growth rate. We suggest that at these high temperatures the gliding arms associated with dislocations have a sufficiently high velocity for the layers to relax even at the highest growth rates. Hence, no benefit is gained from reducing the growth rate, as required at lower growth temperatures to allow the threading arms to glide. The relaxed buffers produced at these high growth rates, nevertheless, have state-of-the-art TDD values of similar to 6 x 10(4) cm(-2) and similar to 1 x 10(5) cm(-2) for Si0.8Ge0.2 and Si0.5Ge0.5 buffers, respectively.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | 2 August 2010 | ||||
| Dates: |
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| Volume: | Vol.25 | ||||
| Number: | No. 8 | ||||
| Number of Pages: | 6 | ||||
| Page Range: | article no. 085007 | ||||
| DOI: | 10.1088/0268-1242/25/8/085007 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | European Commission | ||||
| Grant number: | IST-026828, 216171 |
Data sourced from Thomson Reuters' Web of Knowledge
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