Elliott, Stella N, Smowton, Peter M, Krysa, Andrey B and Beanland, R. (2012) The effect of strained confinement layers in InP self-assembled quantum dot material. Semiconductor Science and Technology, Volume 27 (Number 9). Article number 094008. doi:10.1088/0268-1242/27/9/094008

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Abstract

We investigated a series of self-assembled InP quantum dot structures. The Ga concentrations of the GaxIn(1−x)P upper confining quantum well layers were varied from x = 0.43 to x = 0.58, centering on a strain compensated structure. All were grown on a (Al0.3Ga0.7)0.52In0.48P lower confinement layer. Across this range of composition the dot emission wavelength changed approximately linearly with the Ga fraction. Of the compositions used, x = 0.54 gave the best defined and largest magnitude dot absorption spectrum, corresponding to the largest dot density. This resulted in the lowest overall threshold current density with a reduced threshold current temperature sensitivity at room temperature and above. These results are confirmed over two growth series.

Item Type:	Journal Article
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Semiconductor Science and Technology
Publisher:	Institute of Physics Publishing Ltd.
ISSN:	0268-1242
Official Date:	September 2012
Dates:	Date Event September 2012 Published
Volume:	Volume 27
Number:	Number 9
Page Range:	Article number 094008
DOI:	10.1088/0268-1242/27/9/094008
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/F006683

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