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The effect of strained confinement layers in InP self-assembled quantum dot material

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Elliott, Stella N, Smowton, Peter M, Krysa, Andrey B and Beanland, R. (2012) The effect of strained confinement layers in InP self-assembled quantum dot material. Semiconductor Science and Technology, Volume 27 (Number 9). Article number 094008. doi:10.1088/0268-1242/27/9/094008 ISSN 0268-1242.

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Official URL: http://dx.doi.org/10.1088/0268-1242/27/9/094008

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Abstract

We investigated a series of self-assembled InP quantum dot structures. The Ga concentrations of the GaxIn(1−x)P upper confining quantum well layers were varied from x = 0.43 to x = 0.58, centering on a strain compensated structure. All were grown on a (Al0.3Ga0.7)0.52In0.48P lower confinement layer. Across this range of composition the dot emission wavelength changed approximately linearly with the Ga fraction. Of the compositions used, x = 0.54 gave the best defined and largest magnitude dot absorption spectrum, corresponding to the largest dot density. This resulted in the lowest overall threshold current density with a reduced threshold current temperature sensitivity at room temperature and above. These results are confirmed over two growth series.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Semiconductor Science and Technology
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0268-1242
Official Date: September 2012
Dates:
DateEvent
September 2012Published
Volume: Volume 27
Number: Number 9
Page Range: Article number 094008
DOI: 10.1088/0268-1242/27/9/094008
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/F006683

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