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Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A. and Mawby, P. A. (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. doi:10.1063/1.3449057
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WRAP_Gammon_1172245-es-230512-paper3.pdf - Accepted Version Download (1373Kb) | Preview |
Official URL: http://dx.doi.org/10.1063/1.3449057
Abstract
In this article, we report on the physical and electrical nature of Ge/SiC heterojunction layers that have been formed by molecular beam epitaxy (MBE) deposition. Using x-ray diffraction, atomic force microscopy, and helium ion microscopy, we perform a thorough analysis of how MBE growth conditions affect the Ge layers. We observe the layers developing from independent islands at thicknesses of 100 nm to flat surfaces at 300 nm. The crystallinity and surface quality of the layer is shown to be affected by the deposition parameters and, using a high temperature deposition and a light dopant species, the layers produced have large polycrystals and hence a low resistance. The p-type and n-type layers, 300 nm thick are formed into Ge/SiC heterojunction mesa diodes and these are characterized electrically. The polycrystalline diodes display near ideal diode characteristics (n < 1.05), low on resistance and good reverse characteristics. Current-voltage (I-V) measurements at varying temperature prove that all the layers have two-dimensional fluctuations in the Schottky barrier height (SBH) due to inhomogeneities at the heterojunction interface. Capacitance-voltage analysis and the SBH size extracted from I-V analysis suggest strongly that interface states are present at the surface causing Fermi-level pinning throughout the bands. A simple model is used to quantify the concentration of interface states at the surface.
| Item Type: | Journal Article | ||||
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| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Atomic force microscopy, Semiconductors, Heterojunctions, Interfaces (Physical sciences), Germanium, Molecular beam epitaxy, Silicon compounds | ||||
| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 15 June 2010 | ||||
| Dates: |
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| Date of first compliant deposit: | 3 December 2015 | ||||
| Volume: | Vol.107 | ||||
| Number: | No.12 | ||||
| Number of Pages: | 8 | ||||
| Page Range: | p. 124512 | ||||
| DOI: | 10.1063/1.3449057 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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