The Library

Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

Tools

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E. (Susan E.), Wilson, Neil R., Roberts, G. J., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. ISSN 0021-8979

Preview

Text
WRAP_Gammon_1172245-es-230512-paper3.pdf - Accepted Version
Download (1373Kb) | Preview

Official URL: http://dx.doi.org/10.1063/1.3449057

Abstract

In this article, we report on the physical and electrical nature of Ge/SiC heterojunction layers that have been formed by molecular beam epitaxy (MBE) deposition. Using x-ray diffraction, atomic force microscopy, and helium ion microscopy, we perform a thorough analysis of how MBE growth conditions affect the Ge layers. We observe the layers developing from independent islands at thicknesses of 100 nm to flat surfaces at 300 nm. The crystallinity and surface quality of the layer is shown to be affected by the deposition parameters and, using a high temperature deposition and a light dopant species, the layers produced have large polycrystals and hence a low resistance. The p-type and n-type layers, 300 nm thick are formed into Ge/SiC heterojunction mesa diodes and these are characterized electrically. The polycrystalline diodes display near ideal diode characteristics (n < 1.05), low on resistance and good reverse characteristics. Current-voltage (I-V) measurements at varying temperature prove that all the layers have two-dimensional fluctuations in the Schottky barrier height (SBH) due to inhomogeneities at the heterojunction interface. Capacitance-voltage analysis and the SBH size extracted from I-V analysis suggest strongly that interface states are present at the surface causing Fermi-level pinning throughout the bands. A simple model is used to quantify the concentration of interface states at the surface.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Engineering Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Atomic force microscopy, Semiconductors, Heterojunctions, Interfaces (Physical sciences), Germanium, Molecular beam epitaxy, Silicon compounds
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
ISSN:	0021-8979
Official Date:	15 June 2010
Volume:	Vol.107
Number:	No.12
Number of Pages:	8
Page Range:	p. 124512
Identification Number:	10.1063/1.3449057
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
References:	1 www.cree.com, www.inﬁneon.com, and www.st.com. 2 V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162, 321 (1997). 3 M. Bassler, G. Pensl, and V. V. Afanasev, Diamond Relat. Mater. 6, 1472 (1997). 4 A. Pérez-Tomás, M. R. Jennings, P. M. Gammon, G. J. Roberts, P. A. Mawby, J. Millán, P. Godignon, J. Montserrat, and N. Mestres, Microelectron. Eng. 85, 4704 (2008). 5 L. Chen, O. J. Guy, M. R. Jennings, P. Igic, and P. A. Mawby, Solid-State Electron. 51, 662 (2007). 6 M. Hoshi, T. Hayashi, H. Tanaka, and S. Yamagami, Power Conversion Conference ’07, 2007 (unpublished), p. 373. 7 A. Pérez-Tomás, M. Lodzinski, O. J. Guy, M. R. Jennings, M. Placidi, J. Llobet, P. M. Gammon, M. Davis, J. A. Covington, S. E. Burrows, and P. A. Mawby, Appl. Phys. Lett. 94, 103510 (2009). 8 H. Tanaka, T. Hayashi, Y. Shimoida, S. Yamagami, S. Tanimoto, and M. Hoshi, Proceedings of ISPSD ’05, 2005 (unpublished), p. 287. 9 A. Pérez-Tomás, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington, and P. A. Mawby, Microelectron. J. 38, 1233 (2007). 10 A. Pérez-Tomás, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby, V. Shah, and T. Grasby, J. Appl. Phys. 102, 014505 (2007). 11 M. R. Jennings, A. Pérez-Tomás, O. J. Guy, R. Hammond, S. E. Burrows, P. M. Gammon, M. Lodzinski, J. A. Covington, and P. A. Mawby, Electrochem. Solid-State Lett. 11, H306 (2008). 12 P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, and P. A. Mawby, Appl. Phys. Lett. 93, 112104 (2008). 13 P. M. Gammon, A. Pérez-Tomás, V. A. Shah, G. J. Roberts, M. R. Jennings, J. A. Covington, and P. A. Mawby, J. Appl. Phys. 106, 093708 (2009). 14 W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A. Ritenour, L. Lee and D. Antoniadis, Tech. Dig. VLSI Symp. 2003, 121. 15 R. T. Tung, Phys. Rev. B 45, 13509 (1992). 16 J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. 70, 7403 (1991). 17 R. T. Tung, Appl. Phys. Lett. 58, 2821 (1991). 18 W. Kern and D. A. Poutinen, RCA Rev. 31, 187 (1970). 19 W. T. Anderson, A. Christou, and J. E. Davey, IEEE J. Solid-State Circuits SC13, 4430 (1978). 20 J. Morgan, J. Notte, R. Hill, and B. Ward, Microscopy Today 14, 24 (2006). 21 D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), p. 158. 22 G. S. Marlow and M. B. Das, Solid-State Electron. 25, 91 (1982). 23 M. Shur, S. Rumyantsev, and M. Levinshtein, SiC Materials And Devices (World Scientiﬁc, Washington, D.C., 2006), Vol. 1, p. 158. 24 S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. 49, 85 (1986). 25 P. Godignon, R. Perez, D. Tournier, N. Mestres, H. Mank, and D. Turover, MRS Symposia Proceedings No. 815 (Materials Research Society, Pittsburgh, 2004). 26 F. Roccaforte, F. L. Via, V. Raineri, R. Pierobon, and E. Zanoni, J. Appl. Phys. 93, 9137 (2003). 27 R. T. Tung, Mater. Sci. Eng. 35, 1 (2001). 28 A. M. Goodman, J. Appl. Phys. 34, 329 (1963). 29 S. J. Fonash, J. Appl. Phys. 54, 1966 (1983). 30 J. Tersoff, Phys. Rev. Lett. 52, 465 (1984). 31 W. Mönch, Appl. Surf. Sci. 117–118, 380 (1997). 32 W. Mönch, Electronic Properties of Semiconductor Interfaces (Springer, Berlin, 2004). 33 P. Chattopadhyay and S. Sanyal, Appl. Surf. Sci. 89, 205 (1995). 34 W. Schottky, Z. Phys. 113, 367 (1939). 35 N. F. Mott, Proc. R. Soc. London, Ser. A 171, 27 (1939). 36 H. J. Im, Y. Ding, J. P. Pelz, and W. J. Choyke, Phys. Rev. B 64, 075310 (2001).
URI:	http://wrap.warwick.ac.uk/id/eprint/5510