Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2012) Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, Volume 33 (Number 7). pp. 1039-1041. doi:10.1109/LED.2012.2196671 ISSN 0741-3106.

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Abstract

This letter investigates the electrothermal stability of MOSFETs during switching transients. Switch-mode MOSFETs, when transiting between the opposite ends of the load line, pass through bias conditions with high thermal runaway probability, i.e., RTH · VDS · dIDS/dT >; 1. It is shown here that the likelihood of thermal runaway increases when dIDS/dT is positive and the switching duration is greater than the thermal time constant. This condition is worse for advanced MOSFETs with high transconductance because the zero-temperature-crossover point occurs at higher drain currents. This letter uses a physically calibrated MOSFET model for detailed analysis of the electrothermal dynamics during switching transients.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title:	IEEE Electron Device Letters
Publisher:	IEEE
ISSN:	0741-3106
Official Date:	July 2012
Dates:	Date Event July 2012 Published
Volume:	Volume 33
Number:	Number 7
Page Range:	pp. 1039-1041
DOI:	10.1109/LED.2012.2196671
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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