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Modeling the electrothermal stability of power MOSFETs during switching transients
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Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2012) Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, Volume 33 (Number 7). pp. 1039-1041. doi:10.1109/LED.2012.2196671
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Official URL: http://dx.doi.org/10.1109/LED.2012.2196671
Abstract
This letter investigates the electrothermal stability of MOSFETs during switching transients. Switch-mode MOSFETs, when transiting between the opposite ends of the load line, pass through bias conditions with high thermal runaway probability, i.e., RTH · VDS · dIDS/dT >; 1. It is shown here that the likelihood of thermal runaway increases when dIDS/dT is positive and the switching duration is greater than the thermal time constant. This condition is worse for advanced MOSFETs with high transconductance because the zero-temperature-crossover point occurs at higher drain currents. This letter uses a physically calibrated MOSFET model for detailed analysis of the electrothermal dynamics during switching transients.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||
| Journal or Publication Title: | IEEE Electron Device Letters | ||||
| Publisher: | IEEE | ||||
| ISSN: | 0741-3106 | ||||
| Official Date: | July 2012 | ||||
| Dates: |
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| Volume: | Volume 33 | ||||
| Number: | Number 7 | ||||
| Page Range: | pp. 1039-1041 | ||||
| DOI: | 10.1109/LED.2012.2196671 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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