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Physical modelling of large area 4H-SiC PiN diodes

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Bryant, Angus T., Jennings, M. R., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Jorda, X., Milian, J., Palmer, P. R., Santi, E. and Hudgins, J. L. (2009) Physical modelling of large area 4H-SiC PiN diodes. In: IEEE Energy Conversion Congress and Exposition, San Jose, CA, September 20-24, 2009. Published in: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6 pp. 494-501.

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Official URL: http://dx.doi.org/10.1109/ECCE.2009.5316233

Abstract

The recent developments in SIC PIN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 degrees C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area.

Item Type: Conference Item (Paper)
Subjects: T Technology > TJ Mechanical engineering and machinery
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Engineering
Journal or Publication Title: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6
Publisher: IEEE
ISBN: 978-1-4244-2892-2
Date: 2009
Number of Pages: 8
Page Range: pp. 494-501
Identification Number: 10.1109/ECCE.2009.5316233
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: IEEE Energy Conversion Congress and Exposition
Type of Event: Conference
Location of Event: San Jose, CA
Date(s) of Event: September 20-24, 2009
URI: http://wrap.warwick.ac.uk/id/eprint/5535

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