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Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature

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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.645-648.889

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...

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Abstract

SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility [2]. Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology [3], a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.

Item Type: Conference Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Faculty of Science, Engineering and Medicine > Science > Physics
Series Name: Materials Science Forum
Journal or Publication Title: Materials Science Forum
Publisher: Trans Tech Publications Ltd.
ISBN: *****************
ISSN: 0255-5476
Editor: Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T
Official Date: 2010
Dates:
DateEvent
2010Published
Volume: Vol.645-648
Number of Pages: 4
Page Range: pp. 889-892
DOI: 10.4028/www.scientific.net/MSF.645-648.889
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 13th International Conference on Silicon Carbide and Related Materials
Type of Event: Conference
Location of Event: Nurnberg, Germany
Date(s) of Event: October 11-16, 2009

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