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Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature
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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.645-648.889
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
Abstract
SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility [2]. Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology [3], a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Series Name: | Materials Science Forum | ||||
| Journal or Publication Title: | Materials Science Forum | ||||
| Publisher: | Trans Tech Publications Ltd. | ||||
| ISBN: | ***************** | ||||
| ISSN: | 0255-5476 | ||||
| Editor: | Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T | ||||
| Official Date: | 2010 | ||||
| Dates: |
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| Volume: | Vol.645-648 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 889-892 | ||||
| DOI: | 10.4028/www.scientific.net/MSF.645-648.889 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 13th International Conference on Silicon Carbide and Related Materials | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Nurnberg, Germany | ||||
| Date(s) of Event: | October 11-16, 2009 |
Data sourced from Thomson Reuters' Web of Knowledge
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