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Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature
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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
Abstract
SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility [2]. Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology [3], a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.
| Item Type: | Conference Item (Paper) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
| Series Name: | Materials Science Forum |
| Journal or Publication Title: | Materials Science Forum |
| Publisher: | Trans Tech Publications Ltd. |
| ISBN: | ***************** |
| ISSN: | 0255-5476 |
| Editor: | Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T |
| Date: | 2010 |
| Volume: | Vol.645-648 |
| Number of Pages: | 4 |
| Page Range: | pp. 889-892 |
| Identification Number: | 10.4028/www.scientific.net/MSF.645-648.889 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Conference Paper Type: | Paper |
| Title of Event: | 13th International Conference on Silicon Carbide and Related Materials |
| Type of Event: | Conference |
| Location of Event: | Nurnberg, Germany |
| Date(s) of Event: | October 11-16, 2009 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/5556 |
Data sourced from Thomson Reuters' Web of Knowledge
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