Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892.Full text not available from this repository.
Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) . However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility . Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology , a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.
|Item Type:||Conference Item (Paper)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Divisions:||Faculty of Science > Engineering
Faculty of Science > Physics
|Series Name:||Materials Science Forum|
|Journal or Publication Title:||Materials Science Forum|
|Publisher:||Trans Tech Publications Ltd.|
|Editor:||Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T|
|Number of Pages:||4|
|Page Range:||pp. 889-892|
|Access rights to Published version:||Restricted or Subscription Access|
|Conference Paper Type:||Paper|
|Title of Event:||13th International Conference on Silicon Carbide and Related Materials|
|Type of Event:||Conference|
|Location of Event:||Nurnberg, Germany|
|Date(s) of Event:||October 11-16, 2009|
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