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Silicon-on-SiC, a novel semiconductor structure for power devices
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Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A. and Mawby, P. A. (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
Abstract
A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut (R) process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques.
| Item Type: | Conference Item (Paper) | ||||
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| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Series Name: | Materials Science Forum | ||||
| Journal or Publication Title: | Materials Science Forum | ||||
| Publisher: | Trans Tech Publications Ltd. | ||||
| ISSN: | 0255-5476 | ||||
| Editor: | Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T | ||||
| Official Date: | 2010 | ||||
| Dates: |
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| Volume: | Vol.645-648 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 1243-1246 | ||||
| Identification Number: | 10.4028/www.scientific.net/MSF.645-648.1243 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 13th International Conference on Silicon Carbide and Related Materials | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Nurnberg, Germany | ||||
| Date(s) of Event: | October 11-16, 2009 | ||||
| URI: | http://wrap.warwick.ac.uk/id/eprint/5557 |
Data sourced from Thomson Reuters' Web of Knowledge
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