Silicon-on-SiC, a novel semiconductor structure for power devices
Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246.Full text not available from this repository.
Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut (R) process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques.
|Item Type:||Conference Item (Paper)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Science > Engineering
Faculty of Science > Physics
|Series Name:||Materials Science Forum|
|Journal or Publication Title:||Materials Science Forum|
|Publisher:||Trans Tech Publications Ltd.|
|Editor:||Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T|
|Number of Pages:||4|
|Page Range:||pp. 1243-1246|
|Access rights to Published version:||Restricted or Subscription Access|
|Conference Paper Type:||Paper|
|Title of Event:||13th International Conference on Silicon Carbide and Related Materials|
|Type of Event:||Conference|
|Location of Event:||Nurnberg, Germany|
|Date(s) of Event:||October 11-16, 2009|
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