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Silicon-on-SiC, a novel semiconductor structure for power devices

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Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A. and Mawby, P. A. (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246. doi:10.4028/www.scientific.net/MSF.645-648.1243 ISSN 0255-5476.

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...

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Abstract

A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut (R) process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques.

Item Type: Conference Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Faculty of Science, Engineering and Medicine > Science > Physics
Series Name: Materials Science Forum
Journal or Publication Title: Materials Science Forum
Publisher: Trans Tech Publications Ltd.
ISSN: 0255-5476
Editor: Bauer, AJ and Friedrichs, P and Krieger, M and Pensl, G and Rupp, R and Seyller, T
Official Date: 2010
Dates:
DateEvent
2010Published
Volume: Vol.645-648
Number of Pages: 4
Page Range: pp. 1243-1246
DOI: 10.4028/www.scientific.net/MSF.645-648.1243
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 13th International Conference on Silicon Carbide and Related Materials
Type of Event: Conference
Location of Event: Nurnberg, Germany
Date(s) of Event: October 11-16, 2009

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