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Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A.. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3462932

Abstract

In this paper we present a method for integrating HfO2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO2 on Si, SiC, Si/SiC, and SiO2/SiC have been fabricated and electrically tested. The HfO2/Si/SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering

Divisions:

Faculty of Science > Engineering

Library of Congress Subject Headings (LCSH):

Heterojunctions, Hafnium oxide, Silicon carbide

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

5 July 2010

Dates:

Date	Event
5 July 2010	Published

Volume:

Vol.97

Number:

No.1

Number of Pages:

Page Range:

013506

Identification Number:

10.1063/1.3462932

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

Funder:

Great Britain. Dept. of Trade and Industry (DTI)

Grant number:

TP/3/OPT/6/I/17311 (DTI)

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