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Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3462932

Abstract

In this paper we present a method for integrating HfO2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO2 on Si, SiC, Si/SiC, and SiO2/SiC have been fabricated and electrically tested. The HfO2/Si/SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Heterojunctions, Hafnium oxide, Silicon carbide
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	5 July 2010
Volume:	Vol.97
Number:	No.1
Number of Pages:	3
Page Range:	013506
Identification Number:	10.1063/1.3462932
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Great Britain. Dept. of Trade and Industry (DTI)
Grant number:	TP/3/OPT/6/I/17311 (DTI)
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URI:	http://wrap.warwick.ac.uk/id/eprint/5585