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Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A.. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3462932

Abstract

In this paper we present a method for integrating HfO2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO2 on Si, SiC, Si/SiC, and SiO2/SiC have been fabricated and electrically tested. The HfO2/Si/SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering

Divisions:

Faculty of Science > Engineering

Library of Congress Subject Headings (LCSH):

Heterojunctions, Hafnium oxide, Silicon carbide

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

5 July 2010

Dates:

Date	Event
5 July 2010	Published

Volume:

Vol.97

Number:

No.1

Number of Pages:

Page Range:

013506

Identifier:

10.1063/1.3462932

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

Funder:

Great Britain. Dept. of Trade and Industry (DTI)

Grant number:

TP/3/OPT/6/I/17311 (DTI)

References:

1www.cree.com; www.semisouth.com (2010)
2S. Ryu, B. Hull, S. Dhar, L. Cheng, Q. Zhang, J. Richmond,
M. Das, A. Agarwal, J. Palmour, A. Lelis, B. Geil and C. Scozzie,
Mater. Sci. Forum, 645, 969 (2010).
3L Yu, K.P. Cheung, J. Campbell, J.S. Suehle, and K Sheng, IEEE
IRW Final Report 141 (2008).
4M. M. Maranowski and J. A. Cooper, IEEE Trans. Elec. Devices,
46, 520 (1999).
5L. A. Lipkin and J. W. Palmour, IEEE Trans. Elec. Devices, 46,
525 (1999).
6T. Zheleva, A. Lelis, G. Duscher, F. Liu, I. Levin, and M. Das,
Appl. Phys. Lett. 93, 022108 (2008).
7T. L. Biggersta®, C. L. Reynolds, T. Zheleva, A. Lelis, D. Haber-
sat, S. Haney, S.-H. Ryu, A. Agarwal, and G. Duscher, Appl.
Phys. Lett. 95, 032108 (2009).
8A. J. Lelis, D. Habersat, R. Green, A. Ogunniyi, M. Gur¯nkel,
J. Suehle and N. Goldsman, IEEE Trans. Elec. Devices, 55, 1835,
(2008).
9S. Potbhare, A. Akturk, N. Goldsman, A. Lelis, S. Dhar and
A. Agarwal, Mater. Sci. Forum, 645, 975 (2010).
10K. Y. Gao, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadich,
J. D. Riley, and R. G. C. Leckey, Appl. Phys. Lett. 83, 1830
(2003).
11Q. Chen, Y. P. Feng, J. W. Chai, Z. Zhang, J. S. Pan, and
S. J. Wang, Appl. Phys. Lett. 93, 052104 (2008).
12J. Robertson, Journal of Non-Crystalline Solids, 303, 94, (2002).
13T. Hatayama, S. Hino, N. Miura, T. Oomori, and E. Tokumitsu,
IEEE Trans. Elec. Devices, 55, 2041 (2007).
14V. V. Afanas'ev, A. Stesmans, F. Chen, S. A. Campbell, and
R. Smith, Appl. Phys. Lett. 82, 922 (2003).
15M. Wolborski, M. Rooth, M. Bakowski, and A. Hallen, J. Appl.
Phys. 101, 124105 (2007).
16M. R. Jennings, A. Perez-Tomas, O. J. Guy, M. Lodzin-
ski, P. M. Gammon, S. E. Burrows, J. A. Covington, and
P. A. Mawby, Mater. Sci. Forum, 645, 1243 (2010).
17A. Perez-Tomas, M. R. Jennings, M. Davis, V. Shah, T. Grasby,
J. A. Covington and P. A. Mawby, Microelectronics Journal, 38,
1233 (2007).
18A. Perez-Tomas, M. R. Jennings, M. Davis, J. A. Covington,
P. A. Mawby, V. Shah and T. Grasby, J. Appl. Phys. 102 014505
(2007).
19A. Perez-Tomas, M. Lodzinski, O. J. Guy, M. R. Jennings,
M. Placidi, J. Llobet, P. M. Gammon, M. Davis, J. A. Coving-
ton, S. E. Burrows, P. A. Mawby, Appl. Phys. Lett. 94, 103510
(2009).
20M. R. Jennings, A. Perez-Tomas, O. J. Guy, R. Hammond,
S. E. Burrows, P. M. Gammon, M. Lodzinski, J. A. Covington,
and P. A. Mawby, Electrochemical and Solid-State Letters, 11
H306 (2008).
21P. M. Gammon, A. Perez-Tomas, V. A. Shah, G. J. Roberts,
M. R. Jennings, J. A. Covington, and P. A. Mawby J. Appl.
Phys. 106, 093708 (2009).
22C. M. Tanner, J. Choi, and J. P. Chang, J. Appl. Phys. 101,
034108 (2007).
23R. Mahapatra, A. K. Chakraborty, A. B. Horsfall, N. G. Wright,
G. Beamson, and K. S. Coleman, Appl. Phys. Lett. 92, 042904
(2008).