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Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices
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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. doi:10.1063/1.3462932
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WRAP_Gammon_1172245-es-230512-gammon_-_integration_of_hfo2_on_si-sic_heterojunctions.pdf - Accepted Version Download (409Kb) | Preview |
Official URL: http://dx.doi.org/10.1063/1.3462932
Abstract
In this paper we present a method for integrating HfO2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO2 on Si, SiC, Si/SiC, and SiO2/SiC have been fabricated and electrically tested. The HfO2/Si/SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
| Divisions: | Faculty of Science > Engineering | ||||
| Library of Congress Subject Headings (LCSH): | Heterojunctions, Hafnium oxide, Silicon carbide | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 5 July 2010 | ||||
| Dates: |
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| Volume: | Vol.97 | ||||
| Number: | No.1 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | 013506 | ||||
| DOI: | 10.1063/1.3462932 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Great Britain. Dept. of Trade and Industry (DTI) | ||||
| Grant number: | TP/3/OPT/6/I/17311 (DTI) |
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