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Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures
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Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, Volume 13 (Number 5). Article number 055002. doi:10.1088/1468-6996/13/5/055002 ISSN 1468-6996.
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Official URL: http://dx.doi.org/10.1088/1468-6996/13/5/055002
Abstract
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making the suspended regions and to take advantage of these planes to retain the underlying Si to support the structures. The technique is demonstrated by forming suspended microwires, spiderwebs and van der Pauw cross structures. We finally report on the low-temperature electrical isolation of the undoped Ge layers. This novel isolation method increases the Ge resistivity to 280 Ω cm at 10 K, over two orders of magnitude above that of a bulk Ge on Si(001) layer, by removing material containing the underlying misfit dislocation network that otherwise provides the main source of electrical conduction.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Science and Technology of Advanced Materials | ||||
Publisher: | Institute of Physics Publishing Ltd. | ||||
ISSN: | 1468-6996 | ||||
Official Date: | 26 November 2012 | ||||
Dates: |
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Volume: | Volume 13 | ||||
Number: | Number 5 | ||||
Page Range: | Article number 055002 | ||||
DOI: | 10.1088/1468-6996/13/5/055002 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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