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Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC
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Pérez-Tomás, Amador, Fontserè, A., Placidi, M., Jennings, M. R. and Gammon, P. M. (2013) Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC. Modelling and Simulation in Materials Science and Engineering, Volume 21 (Number 3). Article number 035004. doi:10.1088/0965-0393/21/3/035004 ISSN 0965-0393.
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Official URL: http://dx.doi.org/10.1088/0965-0393/21/3/035004
Abstract
Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Modelling and Simulation in Materials Science and Engineering | ||||
Publisher: | IOP Publishing | ||||
ISSN: | 0965-0393 | ||||
Official Date: | 2013 | ||||
Dates: |
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Volume: | Volume 21 | ||||
Number: | Number 3 | ||||
Page Range: | Article number 035004 | ||||
DOI: | 10.1088/0965-0393/21/3/035004 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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