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Surface band-gap narrowing in quantized electron accumulation layers
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King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph.. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. ISSN 0031-9007
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Official URL: http://dx.doi.org/10.1103/PhysRevLett.104.256803
Abstract
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Physical Review Letters |
| Publisher: | American Physical Society |
| ISSN: | 0031-9007 |
| Date: | 24 June 2010 |
| Volume: | Vol.104 |
| Number: | No.25 |
| Number of Pages: | 4 |
| Page Range: | Article no. 256803 |
| Identification Number: | 10.1103/PhysRevLett.104.256803 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Lundbeck foundation, Danish National Research Council, Spanish government |
| Grant number: | EP/H012575/1 (EPSRC), MAT2007-66129 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/5636 |
Data sourced from Thomson Reuters' Web of Knowledge
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