Surface band-gap narrowing in quantized electron accumulation layers
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph.. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. ISSN 0031-9007Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevLett.104.256803
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Physical Review Letters|
|Publisher:||American Physical Society|
|Date:||24 June 2010|
|Number of Pages:||4|
|Page Range:||Article no. 256803|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC), Lundbeck foundation, Danish National Research Council, Spanish government|
|Grant number:||EP/H012575/1 (EPSRC), MAT2007-66129|
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