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Electrical characterization of Si(100) surface at p-Si/SiGe/Si structure using low temperature Hall measurement analysis
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Gholizadeh Arashti, Maryam and Sadeghzadeh, Mohammad Ali (2013) Electrical characterization of Si(100) surface at p-Si/SiGe/Si structure using low temperature Hall measurement analysis. Vacuum, Volume 93 . pp. 1-6. doi:10.1016/j.vacuum.2012.12.006 ISSN 0042-207X.
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Official URL: http://dx.doi.org/10.1016/j.vacuum.2012.12.006
Abstract
The pinning position of Fermi level and surface charge density at Si(100) surface of epitaxially grown p-Si/SiGe/Si structure has been evaluated via low temperature Hall experiment analysis. It is explained how the density of two-dimensional hole gas (2DHG) formed in the SiGe quantum well is affected by structural parameters, and proximity of Si surface charges and 2DHG. This approach is based on static charge transfer and Mid-gap Pinning Model (MPM). Finally, the passivation of Si surface by diluted HF etchant has been discussed.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Vacuum | ||||
Publisher: | Pergamon | ||||
ISSN: | 0042-207X | ||||
Official Date: | 2013 | ||||
Dates: |
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Volume: | Volume 93 | ||||
Page Range: | pp. 1-6 | ||||
DOI: | 10.1016/j.vacuum.2012.12.006 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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