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Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
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Pérez-Tomás, Amador, Fontserè, A., Sánchez, S., Jennings, M. R., Gammon, P. M. and Cordier, Y. (2013) Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors. Applied Physics Letters, Volume 102 (Number 2). Article number 023511. doi:10.1063/1.4788722 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4788722
Abstract
Here, using a frequency dependent conductance analysis, we map the parallel conductance vs gate bias/frequency and further analyze the slow and fast traps as a function of the Fermi level for different gate architectures of analogous AlGaN/GaN heterojunction transistors with Schottky and SiNx metal-insulator-semiconductor (MIS) gate. The density of interface traps (Dit)-MIS reducing Dit-, the characteristic trap constant and the variance of the band-bending (σs) have been investigated for slow and fast traps. Additional gate stress appears to have a notable effect on the MIS fast trap profile with σs increasing up to 2.5 kT/q.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | January 2013 | ||||
Dates: |
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Volume: | Volume 102 | ||||
Number: | Number 2 | ||||
Page Range: | Article number 023511 | ||||
DOI: | 10.1063/1.4788722 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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