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The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy
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Yang, Rui, Krzyzewski, T. J. and Jones, T. S. (Tim S.) (2013) The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy. Applied Physics Letters, Volume 102 (Number 11). 112104. doi:10.1063/1.4795790 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4795790
Abstract
The epitaxial growth of GaN by Plasma Assisted Molecular Beam Epitaxy was investigated by Scanning Tunnelling Microscope (STM). The GaN film was grown on initial GaN (0001) and monitored by in situ Reflection High Energy Electron Diffraction and STM during the growth. The STM characterization was carried out on different sub-films with increased thickness. The growth of GaN was achieved in 3D mode, and the hexagonal edge of GaN layers and growth gradient were observed. The final GaN was of Ga polarity and kept as (0001) orientation, without excess Ga adlayers or droplets formed on the surface.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | March 2013 | ||||
Dates: |
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Volume: | Volume 102 | ||||
Number: | Number 11 | ||||
Article Number: | 112104 | ||||
DOI: | 10.1063/1.4795790 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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