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Long-wavelength photoluminescence from stacked layers of high-quality type-II GaSb/GaAs quantum rings
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Carrington, Peter J., Young, Robert J. (Robert Joseph), Hodgson, Peter D., Sánchez, Ana M., Hayne, Manus and Krier, Anthony (2013) Long-wavelength photoluminescence from stacked layers of high-quality type-II GaSb/GaAs quantum rings. Crystal Growth & Design, Volume 13 (Number 3). pp. 1226-1230. doi:10.1021/cg301674k ISSN 1528-7483.
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Official URL: http://dx.doi.org/10.1021/cg301674k
Abstract
We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As–Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 °C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 × 1011 cm–2. An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 μm is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Crystal Growth & Design | ||||
Publisher: | American Chemical Society | ||||
ISSN: | 1528-7483 | ||||
Official Date: | 2013 | ||||
Dates: |
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Volume: | Volume 13 | ||||
Number: | Number 3 | ||||
Page Range: | pp. 1226-1230 | ||||
DOI: | 10.1021/cg301674k | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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