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X-band rapid-scan EPR of samples with long electron spin relaxation times : a comparison of continuous wave, pulse and rapid-scan EPR

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Mitchell, Deborah G., Tseitlin, Mark, Quine, Richard W., Meyer, Virginia, Newton, Mark E., Schnegg, Alexander, George, Benjamin, Eaton, Sandra S. and Eaton, Gareth R. (2013) X-band rapid-scan EPR of samples with long electron spin relaxation times : a comparison of continuous wave, pulse and rapid-scan EPR. Molecular Physics . pp. 1-10. doi:10.1080/00268976.2013.792959

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Official URL: http://dx.doi.org/10.1080/00268976.2013.792959

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Abstract

X-band room temperature spectra obtained by rapid-scan, continuous wave, field-swept echo-detected and Fourier transform electron paramagnetic resonance (FTEPR) were compared for three samples with long electron spin relaxation times: amorphous hydrogenated silicon (T 1 = 11 μs, T 2 = 3.3 μs), 0.2% N@C60 solid (T 1 = 120–160 μs, T 2 = 2.8 μs) and neutral single substitutional nitrogen centres (NS 0) in diamonds (T 1 = 2300 μs, T 2 = 230 μs). For each technique, experimental parameters were selected to give less than 2% broadening of the lineshape. For the same data acquisition times, the signal-to-noise for the rapid-scan spectra was one-to-two orders of magnitude better than for continuous wave or field-swept echo-detected spectra. For amorphous hydrogenated silicon, T 2* ( 10 ns) is too short to perform FTEPR. For 0.2% N@C60, the signal-to-noise ratio for rapid scan is about five times better than for FTEPR. For NS 0 the signal-to-noise ratio is similar for rapid scan and FTEPR.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Molecular Physics
Publisher: Taylor & Francis Ltd.
ISSN: 0026-8976
Official Date: 2013
Dates:
DateEvent
2013Published
Page Range: pp. 1-10
DOI: 10.1080/00268976.2013.792959
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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