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In-vacancies in Si-doped InN

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Rauch, C., Reurings, F., Tuomisto, F., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Lu, H., Schaff, W. J., Gallinat, C. S., Koblmueller, G., Speck, James S., Egger, W., Loewe, B., Ravelli, L. and Sojak, S. (2010) In-vacancies in Si-doped InN. In: Fall Meeting of the European-Materials-Research-Society, Warsaw, Poland, September 14-18, 2009. Published in: Physica Status Solidi A, Vol.207 (No.5). pp. 1083-1086. ISSN 1862-6300. doi:10.1002/pssa.200983120

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Official URL: http://dx.doi.org/10.1002/pssa.200983120

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Abstract

The introduction of vacancy type point defects by Si doping in InN grown by plasma-assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In-vacancy (V-In) acceptors were identified in the material. For increasing Si doping an enhanced formation of V-In, defects was observed, up to a concentration of c(V) = 7 x 10(17) cm(-3) in the highest doped sample (n(e) = 6.6 x 10(20) cm(-3)). A strong inhomogeneity of the defect profile with a significant increase of the V-In, concentration toward the layer/substrate interface could be detected. Additionally, larger vacancy clusters containing several V-In are formed in the proximity of the interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Physica Status Solidi A
Publisher: Wiley-VCH Verlag GMBH
ISSN: 1862-6300
Official Date: May 2010
Dates:
DateEvent
May 2010Published
Volume: Vol.207
Number: No.5
Number of Pages: 4
Page Range: pp. 1083-1086
DOI: 10.1002/pssa.200983120
Status: Not Peer Reviewed
Publication Status: Published
Title of Event: Fall Meeting of the European-Materials-Research-Society
Type of Event: Conference
Location of Event: Warsaw, Poland
Date(s) of Event: September 14-18, 2009

Data sourced from Thomson Reuters' Web of Knowledge

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