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High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
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Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, Volume 114 (Number 15). Article: 154306. doi:10.1063/1.4825130 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.4825130
Abstract
Epitaxial growth of Ge on Si has been investigated in order to produce high quality Ge layers on (110)- and (111)-orientated Si substrates, which are of considerable interest for their predicted superior electronic properties compared to (100) orientation. Using the low temperature/high temperature growth technique in reduced pressure chemical vapour deposition, high quality (111) Ge layers have been demonstrated almost entirely suppressing the formation of stacking faults (< 107 cm−2) with a very low rms roughness of less than 2 nm and a reduction in threading dislocation density (TDD) (∼ 3 × 108 cm−2). The leading factor in improving the buffer quality was use of a thin, partially relaxed Ge seed layer, where the residual compressive strain promotes an intermediate islanding step between the low temperature and high temperature growth phases. (110)-oriented layers were also examined and found to have similar low rms roughness (1.6 nm) and TDD below 108 cm−2, although use of a thin seed layer did not offer the same relative improvement seen for (111).
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 17 October 2013 | ||||
| Dates: |
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| Volume: | Volume 114 | ||||
| Number: | Number 15 | ||||
| Page Range: | Article: 154306 | ||||
| DOI: | 10.1063/1.4825130 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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