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Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
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Mahajumi, Abu-Syed, Carrington, Peter, Kostakis, Ioannis, Missous, Mohammed, Sánchez, Ana M., Zhuang, Qian-dong, Young, Robert, Hayne, Manus and Krier, Anthony (2013) Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics, Volume 46 (Number 30). Article number 305104. doi:10.1088/0022-3727/46/30/305104 ISSN 0022-3727.
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Official URL: http://dx.doi.org/10.1088/0022-3727/46/30/305104
Abstract
The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski–Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 °C to 800 °C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb–As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Journal of Physics D: Applied Physics | ||||
Publisher: | IOP Publishing | ||||
ISSN: | 0022-3727 | ||||
Official Date: | July 2013 | ||||
Dates: |
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Volume: | Volume 46 | ||||
Number: | Number 30 | ||||
Page Range: | Article number 305104 | ||||
DOI: | 10.1088/0022-3727/46/30/305104 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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