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Optical absorption by dilute GaNSb alloys : influence of N pair states

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Mudd, James J., Kybert, Nicholas J., Linhart, W. M., Buckle, L., Ashley, Tim, King, P. D. C., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Optical absorption by dilute GaNSb alloys : influence of N pair states. Applied Physics Letters, Volume 103 (Number 4). Article number 042110. doi:10.1063/1.4816519

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Official URL: http://dx.doi.org/10.1063/1.4816519

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Abstract

The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

Item Type: Journal Article
Divisions: Faculty of Science > Chemistry
Faculty of Science > Physics
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 2013
Dates:
DateEvent
2013Published
Volume: Volume 103
Number: Number 4
Article Number: Article number 042110
DOI: 10.1063/1.4816519
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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