Jennings, M. R., Pérez-Tomás, Amador, Bashir, A., Sánchez, Ana M., Severino, A., Ward, Peter J., Thomas, S. M., Fisher, Craig A., Gammon, P. M., Zabala, M., Burrows, S. E., Donnellan, B., Hamilton, D. P., Walker, David and Mawby, P. A. (2012) Bow free 4'' diameter 3C-SiC Epilayers formed upon wafer-bonded Si/SiC substrates. ECS Solid State Letters, Volume 1 (Number 6). P85-P88. doi:10.1149/2.007206ssl

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Abstract

The physical and electrical properties of 4-inch 3C-SiC epitaxial layers, deposited on Si (111) wafers, which were wafer bonded to polycrystalline silicon carbide carrier wafers, are presented. We show that this novel Si/SiC wafer bonding process leads to reduced wafer bow, confirmed by imaging, in the form of optical microscopy (×100 objective lens) together with a digital camera. All 3C-SiC layers grown above Si/SiC structures by conventional chemical vapor deposition techniques are shown to be single crystal in nature. 3C-SiC metal oxide semiconductor capacitors have been fabricated via thermal oxidation at 1100°C in pure oxygen for 90 minutes, with a density of interface states measured at ∼2 × 1011 cm−2 eV−1 at 0.2 eV beneath the conduction band edge. These structures have the potential to realize thick, bow-free 3C-SiC layers suitable for power device fabrication.

Item Type:	Journal Article
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	ECS Solid State Letters
Publisher:	Electrochemical Society, Inc.
ISSN:	2162-8742
Official Date:	2012
Dates:	Date Event 2012 Published
Volume:	Volume 1
Number:	Number 6
Page Range:	P85-P88
DOI:	10.1149/2.007206ssl
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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