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Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02

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Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003

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Official URL: http://dx.doi.org/10.1088/0022-3727/46/26/264003

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Abstract

The N content of a series of GaNSb samples grown by molecular-beam epitaxy is investigated using high-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectrometry. The N contents determined by the two methods agree well at lower N compositions (x < 0.01), and deviate significantly at larger N contents (x > 0.02). Analysis of the HRXRD-determined lattice constant using Vegard's law, underestimates the N content for high N compositions. The underestimation is found to be up to 24% for x = 0.03. The variation of the lattice parameter with N content is modelled by considering the influence of the density of the interstitial N-Sb complex rising with increasing N content.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Journal of Physics D: Applied Physics
Publisher: IOP Publishing
ISSN: 0022-3727
Official Date: 3 July 2013
Dates:
DateEvent
3 July 2013Published
Volume: Volume 46
Number: Number 26
Page Range: Article number 264003
DOI: 10.1088/0022-3727/46/26/264003
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access

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