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Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02
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Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003
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Official URL: http://dx.doi.org/10.1088/0022-3727/46/26/264003
Abstract
The N content of a series of GaNSb samples grown by molecular-beam epitaxy is investigated using high-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectrometry. The N contents determined by the two methods agree well at lower N compositions (x < 0.01), and deviate significantly at larger N contents (x > 0.02). Analysis of the HRXRD-determined lattice constant using Vegard's law, underestimates the N content for high N compositions. The underestimation is found to be up to 24% for x = 0.03. The variation of the lattice parameter with N content is modelled by considering the influence of the density of the interstitial N-Sb complex rising with increasing N content.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Journal of Physics D: Applied Physics | ||||
| Publisher: | IOP Publishing | ||||
| ISSN: | 0022-3727 | ||||
| Official Date: | 3 July 2013 | ||||
| Dates: |
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| Volume: | Volume 46 | ||||
| Number: | Number 26 | ||||
| Page Range: | Article number 264003 | ||||
| DOI: | 10.1088/0022-3727/46/26/264003 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Open Access |
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