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Hole-phonon energy loss rate in boron doped silicon
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Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515
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Official URL: http://dx.doi.org/10.1109/ULIS.2013.6523522
Abstract
The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | 14th International Conference on Ultimate Integration on Silicon | ||||
Publisher: | IEEE | ||||
ISBN: | 9781467348003 | ||||
Book Title: | 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) | ||||
Official Date: | 2013 | ||||
Dates: |
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Page Range: | pp. 213-215 | ||||
DOI: | 10.1109/ULIS.2013.6523515 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon | ||||
Type of Event: | Conference | ||||
Location of Event: | Coventry, UK | ||||
Date(s) of Event: | 19-21 March 2013 |
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