Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

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Abstract

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	14th International Conference on Ultimate Integration on Silicon
Publisher:	IEEE
ISBN:	9781467348003
Book Title:	2013 14th International Conference on Ultimate Integration on Silicon (ULIS)
Official Date:	2013
Dates:	Date Event 2013 Published
Page Range:	pp. 213-215
DOI:	10.1109/ULIS.2013.6523515
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon
Type of Event:	Conference
Location of Event:	Coventry, UK
Date(s) of Event:	19-21 March 2013

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