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Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

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Intermite, Giuseppe, Warburton, Ryan E., Myronov, Maksym, Allred, Phil, Leadley, D. R. (David R.), Gallacher, Kevin, Paul, Douglas J. (Professor of Semiconductor Devices)‏ , Pilgrim, Neil J., Lever, Leon J. M., Ikonic, Zoran, Kelsall, Robert W. and Buller, G. S. (Gerald S.) (2013) Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 132-133. doi:10.1109/Group4.2013.6644406

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Official URL: http://dx.doi.org/10.1109/Group4.2013.6644406

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Abstract

Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: IEEE International Conference on Group IV Photonics GFP
Publisher: IEEE
Book Title: 10th International Conference on Group IV Photonics
Official Date: 2013
Dates:
DateEvent
2013Published
Page Range: pp. 132-133
DOI: 10.1109/Group4.2013.6644406
Status: Peer Reviewed
Publication Status: Published
Conference Paper Type: Paper
Title of Event: 2013 IEEE 10th International Conference on Group IV Photonics (GFP),
Type of Event: Conference
Location of Event: Seoul
Date(s) of Event: 28-30 Aug 2013

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